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QS6J11 dual pch -12v -2.0a power mosfet range of storage temperature t stg - 55 to + 150 c p d *4 0.6 w power dissipation junction temperature t j 150 c gate - source voltage v gss ? 10 v p d *3 1.25 w continuous drain current i d *1 ? 2 a pulsed drain current i d,pulse *2 ? 8 a drain - source voltage v dss - 12 v taping code tr marking j11 l absolute maximum ratings (t a = 25c) parameter symbol value unit l packaging specifications type packaging taping l application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 l features l inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt6). 4) pb-free lead plating ; rohs compliant l outline v dss - 12v r ds(on) (max.) 105m w i d - 2a p d 1.25w tsmt6 (1) tr1 gate (2) tr2 source (3) tr2 gate * 1 esd protection diode * 2 body diode (4) tr2 drain (5) tr1 source (6) tr1 drain (1) (2) (3) (6) (5) (4) 1/11 2012.06 - rev.b dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
QS6J11 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 mounted on a seramic board (30300.8mm) *4 mounted on a fr4 (15200.8mm) *5 pulsed w transconductance g fs *5 v ds = - 6v, i d = - 2a 2.0 4.8 - s - 120 170 gate input resistannce r g f = 1mhz, open drain - 3 - m w v gs = - 2.5v, i d = - 1a, t j =25c - 105 145 v gs = - 1.8v, i d = - 1a, t j =25c - 150 225 v gs = -4 .5v, i d = - 2a, t j =25c static drain - source on - state resistance r ds(on) *5 v gs = - 4.5v, i d = - 2a, t j =25c - 75 105 - 200 400 v gs = - 10v, i d = - 9a, t j =125c v gate threshold voltage temperature coefficient v (gs)th t j i d = - 1ma referenced to 25 ? c - 2.4 - mv/c gate threshold voltage v gs (th) v ds = - 6v, i d = - 1ma - 0.3 - - 1.0 m a gate - source leakage current i gss v gs = ? 10v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = - 12v, v gs = 0v - - - 1 v breakdown voltage temperature coefficient v (br)dss t j i d = - 1ma referenced to 25c - - 17 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 1ma - 12 - - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - - 208 c/w thermal resistance, junction - ambient r thja *3 - - 100 c/w 2/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 a forward voltage v sd *5 v gs = 0v, i s = - 2a - - - 1.2 v inverse diode continuous, forward current i s *1 t a = 25c - - - 0.75 l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. - 1.3 - gate - drain charge q gd *5 - 0.8 - nc gate - source charge q gs *5 v dd ? - 6v, i d = - 2a v gs = - 4.5v unit min. typ. max. total gate charge q g *5 v dd ? - 6v, i d = - 2a v gs = - 4.5v - 6.5 - l gate charge characteristics (t a = 25c) parameter symbol conditions values - 65 - fall time t f *5 r gs = 10 w - 35 - turn - on delay time t d(on) *5 v dd ? - 6v, v gs = - 4.5v - 10 - ns rise time t r *5 i d = - 1a - 17 - turn - off delay time t d(off) *5 r l = 6 w input capacitance c iss v gs = 0v - 770 - pf output capacitance c oss v ds = - 6v - 75 - reverse transfer capacitance c rss f = 1mhz - 60 - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 t a = 25oc single pulse rth(ch - a)=100 oc /w rth(ch - a)(t)=r(t) rth(ch - a) mounted on ceramic board (30mm 30mm 0.8mm) top d=1 d=0.5 d=0.1 d=0.05 d=0.01 bottom signle 0.1 1 10 100 1000 0.0001 0.01 1 100 t a = 25oc single pulse 0.01 0.1 1 10 0.1 1 10 100 operation in this area is limited by r ds (on) ( v gs = - 4.5v ) p w = 100 m s p w = 1ms p w = 10ms dc operation t a = 25oc single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) 0 20 40 60 80 100 120 0 50 100 150 200 fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : tj [ c] fig.2 maximum safe operating area drain current : - i d [a] drain - source voltage : - v ds [v] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] fig.4 single pulse maxmum power dissipation peak transient power : p(w) pulse width : p w [s] 4/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves fig.5 typical output characteristics(i) drain current : - i d [a] drain - source voltage : - v ds [v] fig.6 typical output characteristics(ii) drain current : - i d [a] drain - source voltage : - v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 v gs = - 1.5v t a = 25oc v gs = - 10v v gs = - 4.5v v gs = - 1.6v v gs = - 2.5v v gs = - 1.8v 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 t a = 25oc v gs = - 1.8v v gs = - 10v v gs = - 4.5v v gs = - 2.5v v gs = - 1.5v v gs = - 1.2v 5/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 v ds = - 6v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 0 20 40 -50 0 50 100 150 v gs =0v i d = - 1ma 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 v ds = - 6v i d = - 1ma fig.7 breakdown voltage vs. junction temperature drain - source breakdown voltage : - v (br)dss [v] junction temperature : t j [ c ] fig.8 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] fig.9 gate threshold voltage vs. junction temperature gate threshold voltage : - v gs(th) [v] junction temperature : t j [ c ] fig.10 transconductance vs. drain current transconductance : g fs [s] drain current : - i d [a] 0.1 1 10 0.01 0.1 1 10 v ds = - 6v t a = - 25oc t a = 25oc t a = 75oc t a = 125oc 6/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 v gs = - 4.5v i d = - 2.0a 0 100 200 300 400 500 0 2 4 6 8 10 i d = - 2.0a i d = - 1.0a t a = 25oc 10 100 1000 0.1 1 10 . v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 fig.11 drain currentderating curve drain current dissipation : i d /i d max. (%) junction temperature : t j [oc] fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on - state resistance : r ds(on) [m w ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. j unction temperature static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [m w ] gate - source voltage : - v gs [v] 7/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves 10 100 1000 0.1 1 10 v gs = - 2.5v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 0.1 1 10 v gs = - 4.5v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 0.1 1 10 v gs = - 1.8v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc fig.16 static drain - source on - state resistance vs. drain current(iii) static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] fig.17 static drain - source on - state resistance vs. drain current(iv) static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] 8/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l electrical characteristic curves 10 100 1000 10000 0.01 0.1 1 10 100 c oss c iss c rss t a = 25oc f=1mhz v gs =0v 1 10 100 1000 10000 0.01 0.1 1 10 t a = 25oc v dd = - 6v v gs = - 4.5v r g =10 w t f t d (off) t r t d (on) 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 t a = 25oc v dd = - 6v i d = - 2.0a r g = 10 w 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc fig.18 typical capacitance vs. drain - source voltage capacitance : c [pf] fig.20 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.19 switching characteristics switching time : t [ns] drain current : - i d [a] fig.21 source current vs. sourse drain voltage source current : - i s [a] source - drain voltage : - v sd [v] drain - source voltage : - v ds [v] 9/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
QS6J11 l dimensions (unit : mm) dimension in mm/inches tsmt6 patterm of terminal position areas 11/11 2012.06 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet e d e h b e lp l1 a3 c a x s a a1 a2 s y s a e1 e b2 l1 q min max min max a - 1.00 - 0.039 a1 0.00 0.10 0 0.004 a2 0.75 0.95 0.03 0.037 a3 b 0.35 0.50 0.014 0.02 c 0.10 0.26 0.004 0.01 d 2.80 3.00 0.11 0.118 e 1.50 1.80 0.059 0.071 e h e 2.60 3.00 0.102 0.118 l1 0.30 0.60 0.012 0.024 lp 0.40 0.70 0.016 0.028 q 0.05 0.25 0.002 0.01 x - 0.20 - 0.008 y - 0.10 - 0.004 min max min max e1 b2 0.70 - 0.028 l1 - 0.90 - 0.035 0.25 0.01 dim milimeters inches 2.10 0.08 dim milimeters inches 0.95 0.04
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.

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